Hoʻokumu ʻo ʻAmelika Hui Pū ʻIa i nā mea semiconductor me ka conductivity thermal kiʻekiʻe e hoʻopaʻa i ka hoʻomehana chip.
Me ka hoʻonui ʻana i ka helu o nā transistors i loko o ka chip, hoʻomau ka hoʻomaikaʻi ʻana o ka hana ʻana o ke kamepiula, akā hoʻopuka ka densification kiʻekiʻe i nā wahi wela.
Me ka ʻole o ka ʻenehana hoʻokele wela kūpono, ma kahi o ka hoʻolōʻihi ʻana i ka wikiwiki o ka hana a me ka hoʻohaʻahaʻa ʻana i ka hilinaʻi, aia kekahi mau kumu no ka Prevents overheating a koi i ka ikehu hou, e hana ana i nā pilikia inefficiency ikehu.I mea e hoʻoponopono ai i kēia pilikia, ua hoʻomohala ke Kulanui o Kaleponi, Los Angeles i kahi mea semiconductor hou me ka conductivity thermal kiʻekiʻe loa i ka makahiki 2018, i haku ʻia me ka boron arsenide a me ka boron phosphide, e like me nā mea hoʻoheheʻe wela e like me daimana a me silika carbide.ratio, me ka oi aku mamua o 3 manawa o ka thermal conductivity.
I Iune 2021, ua hoʻohana ke Kulanui o Kaleponi, Los Angeles, i nā mea semiconductor hou e hui pū me nā pahu kamepiula mana kiʻekiʻe e hoʻopau pono i ka hana wela o nā chips, a laila e hoʻomaikaʻi ai i ka hana kamepiula.Ua hoʻokomo ka hui noiʻi i ka boron arsenide semiconductor ma waena o ka chip a me ka wela e like me ka hui pū ʻana o ka wela wela a me ka chip e hoʻomaikaʻi ai i ka hopena wela, a hana i ka noiʻi ʻana i ka hana hoʻokele wela o ka mīkini maoli.
Ma hope o ka hoʻopaʻa ʻana i ka substrate boron arsenide i ka semiconductor gallium nitride ākea ākea, ua hōʻoia ʻia ua like ke kiʻekiʻe o ka conductivity thermal o ka gallium nitride/boron arsenide interface i ka 250 MW/m2K, a ua hiki ke kūpaʻa wela i kahi pae liʻiliʻi loa.Hoʻohui hou ʻia ka substrate boron arsenide me kahi puʻupuʻu transistor mobility electron kiʻekiʻe i haku ʻia me ka alumini gallium nitride/gallium nitride, a ua hōʻoia ʻia ʻoi aku ka maikaʻi o ka hopena o ka wela ma mua o ka daimana a i ʻole ka silika carbide.
Ua hoʻohana ka hui noiʻi i ka chip ma ka hiki ke kiʻekiʻe loa, a ua ana i ka wahi wela mai ka lumi wela a hiki i ka wela kiʻekiʻe.Hōʻike nā hualoaʻa hoʻokolohua he 137°C ka wela o ka wela daimana, ʻo 167°C ka pahu wela silicon carbide, a ʻo 87°C wale nō ka wela o ka boron arsenide.ʻO ka conductivity thermal maikaʻi loa o kēia interface mai ke ʻano phononic band kūikawā o boron arsenide a me ka hoʻohui ʻana o ka interface.ʻAʻole i loaʻa i ka mea boron arsenide wale nō ka conductivity thermal kiʻekiʻe, akā he liʻiliʻi liʻiliʻi ka pale ʻana i ka wela.
Hiki ke hoʻohana ʻia e like me ka wela wela e hoʻokō i ka mana hana ʻoi aku ka nui.Manaʻo ʻia e hoʻohana ʻia ma ka lōʻihi lōʻihi, ka mana kiʻekiʻe o ke kelepona uila i ka wā e hiki mai ana.Hiki ke hoʻohana ʻia ma ke kahua o ka uila uila kiʻekiʻe a i ʻole ka pahu uila.
Ka manawa hoʻouna: ʻAukake-08-2022